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EIM0618-0.5 UPDATED 02/03/2005 6.0 - 18.0 GHz 1/2-Watt Power Module FEATURES * * * * * 6.0 - 18.0 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +27.0 dBm Output Power at 1dB Compression 8.5 dB Power Gain at 1dB Compression 30% Power Added Efficiency Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB G VSWR PAE Id1dB PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f = 6.0-18.0GHz VDS = 8 V, IDQ 180mA Gain at 1dB Compression f = 6.0-18.0GHz VDS = 8 V, IDQ 180mA Gain Flatness f = 6.0-18.0GHz VDS = 8 V, IDQ 180mA Input/Output VSWR f = 6.0-18.0GHz Power Added Efficiency at 1dB Compression VDS = 8 V, IDQ 180mA f = 6.0-18.0 GHz Drain Current at 1dB Compression f = 6.0-18.0 GHz MIN 26.0 7.5 TYP 27.0 8.5 1.0 1.5:1 30 200 250 2.0:1 % mA MAX UNITS dBm dB dB Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 2 Revised February 2005 EIM0618-0.5 UPDATED 02/03/2005 6.0 - 18.0 GHz 1/2-Watt Power Module CHARACTERISTIC ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2 SYMBOL VDS VGS IDS IGSF PIN PT TCH TSTG ABSOLUTE1 12 V -8 V IDSS 60 mA 27 dBm 3.6 W 175C -65/+175C CONTINUOUS2 8V -3 V 380 mA 10 mA @ 3dB compression 3.0 W 150C -65/+150C Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Power Total Power Dissipation Channel Temperature Storage Temperature Note: 1 Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Typical Power Data (VDS = 8 V, IDSQ = 180 mA) 29 28 27 P-1dB (dBm) P-1dB & G-1dB vs Frequency 14 13 G-1dB (dB) 12 P-1dB (dBm) G-1dB (dB) 11 10 9 8 18.0 26 25 24 23 22 6.0 8.0 10.0 12.0 14.0 16.0 Frequency (GHz) Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 2 of 2 Revised February 2005 |
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